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IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1Reference image

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Mfr. #:
IPD30N10S3L34ATMA1
Batch:
new
Description:
Infineon, OptiMOS T series, MOSFET, NMOS, DPAK (TO-252) package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 30 A
Maximum drain-source voltage 100 V
Package type DPAK (TO-252)
Maximum drain-source resistance 42 mΩ
Mounting type Surface mount
Number of pins 3
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage 2.4 V
Minimum gate threshold voltage 1.2 V
Maximum power dissipation 57 W
Transistor configuration Single
Category -
Other product information

Advantage price,IPD30N10S3L34ATMA1 in stock can be shipped on the same day

In Stock: 2500
Qty.Unit PriceExt. Price
2500+ $0.5466 $1366.5
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
2500
Minimum:
2500
MPQ:
2500
Multiples:
1
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