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BSZ086P03NS3EGATMA1
BSZ086P03NS3EGATMA1Reference image

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Mfr. #:
BSZ086P03NS3EGATMA1
Batch:
new
Description:
Infineon, OptiMOS P series, MOSFET, PMOS, TSDSON package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type P
Maximum continuous drain current 40 A
Maximum drain-source voltage 30 V
Package type TSDSON
Maximum drain-source resistance 13.4 mΩ
Mounting type Surface mount
Number of pins 8
Maximum gate-source voltage -25 V, 25 V
Channel mode Enhancement
Maximum gate threshold voltage 1.9 V
Minimum gate threshold voltage 3.1 V
Maximum power dissipation 69 W
Transistor configuration Single
Category -
Other product information

Advantage price,BSZ086P03NS3EGATMA1 in stock can be shipped on the same day

In Stock: 5000
Qty.Unit PriceExt. Price
5000+ $0.3138 $1569
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
5000
Minimum:
5000
MPQ:
5000
Multiples:
1
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