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SQJ412EP-T1_GE3
SQJ412EP-T1_GE3Reference image

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Mfr. #:
SQJ412EP-T1_GE3
Mfr.:
Batch:
new
Description:
Vishay, SQ Rugged Series, MOSFET, NMOS, PowerPAK SO-8L Package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 32 A
Maximum drain-source voltage 40 V
Package type PowerPAK SO-8L
Maximum drain-source resistance 8.5 mΩ
Mounting type Surface mount
Number of pins 4
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage -
Minimum gate threshold voltage 1.5 V
Maximum power dissipation 83 W
Transistor configuration Single
Category -
Other product information

Advantage price,SQJ412EP-T1_GE3 in stock can be shipped on the same day

In Stock: 3000
Qty.Unit PriceExt. Price
3000+ $0.9093 $2727.9
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
3000
Minimum:
3000
MPQ:
3000
Multiples:
1
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