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SI2365EDS-T1-GE3
SI2365EDS-T1-GE3Reference image

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Mfr. #:
SI2365EDS-T1-GE3
Mfr.:
Batch:
new
Description:
Vishay, MOSFET, PMOS, SOT-23 package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type P
Maximum continuous drain current 4.7 A
Maximum drain-source voltage 20 V
Package type SOT-23
Maximum drain-source resistance 67.5 mΩ
Mounting type Surface mount
Number of pins 3
Maximum gate-source voltage -8 V, 8 V
Channel mode Enhancement
Maximum gate threshold voltage -
Minimum gate threshold voltage 0.4 V
Maximum power dissipation 1.7 W
Transistor configuration Single
Category -
Other product information

Advantage price,SI2365EDS-T1-GE3 in stock can be shipped on the same day

In Stock: 3000
Qty.Unit PriceExt. Price
3000+ $0.0740 $222
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
3000
Minimum:
3000
MPQ:
3000
Multiples:
1
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