LOGO
Total0Items      Cart Subtotal:$0
LOGO
IPD053N08N3GATMA1
IPD053N08N3GATMA1Reference image

Images are for reference only

Mfr. #:
IPD053N08N3GATMA1
Batch:
new
Description:
Infineon, IPD053N08N3 G series, MOSFET, NMOS, TO-252 package
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 90 A
Maximum drain-source voltage 80 V
Package type TO-252
Maximum drain-source resistance 9.5 mΩ
Mounting type Surface mount
Number of pins 3
Maximum gate-source voltage 20 V
Channel mode Enhancement
Maximum gate threshold voltage 3.5 V
Minimum gate threshold voltage 2 V
Maximum power dissipation 150 W
Transistor configuration Single
Category -
Other product information

Advantage price,IPD053N08N3GATMA1 in stock can be shipped on the same day

In Stock: 2500
Qty.Unit PriceExt. Price
2500+ $0.9528 $2382
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
2500
Minimum:
2500
MPQ:
2500
Multiples:
1
Recommend