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SISS23DN-T1-GE3
SISS23DN-T1-GE3Reference image

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Mfr. #:
SISS23DN-T1-GE3
Mfr.:
Batch:
new
Description:
Vishay, TrenchFET series, MOSFET, PMOS, PowerPAK 1212-8 package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type P
Maximum continuous drain current 27 A
Maximum drain-source voltage 20 V
Package type PowerPAK 1212-8
Maximum drain-source resistance 11.5 mΩ
Mounting type Surface mount
Number of pins 8
Maximum gate-source voltage -8 V, 8 V
Channel mode Enhancement
Maximum gate threshold voltage -
Minimum gate threshold voltage 0.4 V
Maximum power dissipation 57 W
Transistor configuration Single
Category -
Other product information

Advantage price,SISS23DN-T1-GE3 in stock can be shipped on the same day

In Stock: 20
Qty.Unit PriceExt. Price
20+ $0.5953 $11.906
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
20
Minimum:
20
MPQ:
20
Multiples:
1
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