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IXFN60N80P
IXFN60N80PReference image

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Mfr. #:
IXFN60N80P
Mfr.:
Batch:
new
Description:
IXYS, HiperFET, Polar series, MOSFET, NMOS, SOT-227 package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type N
Maximum continuous drain current 53 A
Maximum drain-source voltage 800 V
Package type SOT-227
Maximum drain-source resistance 140 mΩ
Mounting type Screw mounting
Number of pins 4
Maximum gate-source voltage -30 V, 30 V
Channel mode Enhancement
Maximum gate threshold voltage 5 V
Minimum gate threshold voltage -
Maximum power dissipation 1.04 kW
Transistor configuration Single
Category -
Other product information

Advantage price,IXFN60N80P in stock can be shipped on the same day

In Stock: 10
Qty.Unit PriceExt. Price
10+ $42.0783 $420.783
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
10
Minimum:
10
MPQ:
10
Multiples:
1
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