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SI4909DY-T1-GE3
SI4909DY-T1-GE3Reference image

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Mfr. #:
SI4909DY-T1-GE3
Mfr.:
Batch:
new
Description:
Vishay, MOSFET, PMOS, SOIC package
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Specifications
frequently asked question
Product AttributeAttribute Value
Channel type P
Maximum continuous drain current 6.5 A
Maximum drain-source voltage 40 V
Package type SOIC
Maximum drain-source resistance 34 mΩ
Mounting type Surface mount
Number of pins 8
Maximum gate-source voltage -20 V, 20 V
Channel mode Enhancement
Maximum gate threshold voltage -
Minimum gate threshold voltage 1.2 V
Maximum power dissipation 3.2 W
Transistor configuration Isolated
Category -
Other product information

Advantage price,SI4909DY-T1-GE3 in stock can be shipped on the same day

In Stock: 2500
Qty.Unit PriceExt. Price
2500+ $0.5178 $1294.5
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
2500
Minimum:
2500
MPQ:
2500
Multiples:
1
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