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AFGB40T65SQDN
AFGB40T65SQDNReference image

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Mfr. #:
AFGB40T65SQDN
Mfr.:
Batch:
new
Description:
onsemi IGBT, max. 650 V, max. 80 A
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Specifications
frequently asked question
Product AttributeAttribute Value
Maximum continuous collector current 80 A
Maximum collector-emitter voltage 650 V
Maximum gate-emitter voltage ±20 V
Number of transistors 1
Maximum power dissipation 238 W
Package type D2PAK
Configuration -
Mounting type Surface mount
Channel type N
Number of pins 3
Switching speed -
Transistor configuration Single
Dimensions 10.67 x 9.65 x 4.58 mm
Other product information

Advantage price,AFGB40T65SQDN in stock can be shipped on the same day

In Stock: 800
Qty.Unit PriceExt. Price
800+ $2.9777 $2382.16
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
800
Minimum:
800
MPQ:
800
Multiples:
1
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